amplifiers - l ine a r & p ower - chip 3 3 - 1 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC906 gaas phemt mmic 2 watt power amplifier, 27.3 - 33.5 ghz v03.0911 general description features functional diagram the hm c906 is a four stage gaas p hem t mmi c 2 w att p ower amplifer which operates between 27.3 and 33.5 g h z. the hm c906 provides 23 db of gain, and +34 dbm of saturated output power and 22% p a e from a +6v supply. the rf i / o s are dc blocked and matched to 50 o hms for ease of integration into m ulti-chip- m odules ( m c m s). all data is taken with the chip in a 50 o hm test fxture connected via two 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils). s aturated o utput p ower: +34 dbm @ 22% p a e h igh o utput ip 3: +43 dbm h igh gain: 23 db dc s upply: +6v @ 1200 ma n o e xternal m atching r equired die s ize: 3.18 x 2.73 x 0.1 mm typical applications the hm c906 is ideal for: ? point-to-point radios ? point-to-multi-point radios ? vsat ? military & space electrical specifcations, t a = +25 c, vdd1 = vdd2 = +6 v, idd = 1200 ma [1] p arameter m in. typ. m ax. m in. typ. m ax. units f requency r ange 27.3 - 31.5 31.5 - 33.5 g h z gain 20 23 20 23 db gain variation o ver temperature 0.022 0.026 db/ c i nput r eturn l oss 10 14 10 14 db o utput r eturn l oss 8 12 10 12 db o utput p ower for 1 db compression ( p 1db) 31 33 30.5 32.5 dbm s aturated o utput p ower ( p sat) 34 33.5 dbm o utput third o rder i ntercept ( ip 3) [2] 40 43 39 42 dbm total s upply current ( i dd) 1200 1200 ma [1] adjust vgg (pad 2 or 12) between -2 to 0v to achieve i dd = 1200 ma typical. [2] m easurement taken at +6v @ 1200 ma, p out / tone = +23 dbm
amplifiers - l ine a r & p ower - chip 3 3 - 2 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC906 v03.0911 gaas phemt mmic 2 watt power amplifier, 27.3 - 33.5 ghz input return loss vs. temperature output return loss vs. temperature broadband gain & return loss vs. frequency gain vs. temperature p1db vs. temperature p1db vs. supply voltage -30 -20 -10 0 10 20 30 20 22 24 26 28 30 32 34 36 38 s21 s11 s22 frequency (ghz) response (db) 14 18 22 26 30 27 28 29 30 31 32 33 34 +25c +85c -55c frequency (ghz) gain (db) -40 -30 -20 -10 0 27 28 29 30 31 32 33 34 +25c +85c -55c return loss (db) frequency (ghz) -40 -30 -20 -10 0 25 26 27 28 29 30 31 32 33 34 +25c +85c -55c return loss (db) frequency (ghz) 27 29 31 33 35 37 27 28 29 30 31 32 33 34 +25c +85c -55c p1db (dbm) frequency (ghz) 27 29 31 33 35 37 27 28 29 30 31 32 33 34 +5.0v +5.5v +6.0v p1db (dbm) frequency (ghz)
amplifiers - l ine a r & p ower - chip 3 3 - 3 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC906 v03.0911 gaas phemt mmic 2 watt power amplifier, 27.3 - 33.5 ghz output ip3 vs. supply current, pout/tone = +23 dbm output ip3 vs. temperature, pout/tone = +23 dbm psat vs. supply current (idd) p1db vs. supply current (idd) psat vs. temperature psat vs. supply voltage 27 29 31 33 35 37 27 28 29 30 31 32 33 34 +25c +85c -55c psat (dbm) frequency (ghz) 27 29 31 33 35 37 27 28 29 30 31 32 33 34 +5.0v +5.5v +6.0v psat (dbm) frequency (ghz) 27 29 31 33 35 37 27 28 29 30 31 32 33 34 1000ma 1200ma 1300ma p1db (dbm) frequency (ghz) 27 29 31 33 35 37 27 28 29 30 31 32 33 34 1000 ma 1200 ma 1300 ma psat (dbm) frequency (ghz) 25 30 35 40 45 50 27 28 29 30 31 32 33 34 +25c +85c -55c ip3 (dbm) frequency (ghz) 25 30 35 40 45 50 27 28 29 30 31 32 33 34 1000 ma 1200 ma 1300 ma ip3 (dbm) frequency (ghz)
amplifiers - l ine a r & p ower - chip 3 3 - 4 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC906 v03.0911 gaas phemt mmic 2 watt power amplifier, 27.3 - 33.5 ghz power compression @ 29.5 ghz reverse isolation vs. temperature output ip3 vs. supply voltage, pout/tone = +23 dbm output im3 @ vdd = +5.5v output im3 @ vdd = +6v output im3 @ vdd = +5v 25 30 35 40 45 50 27 28 29 30 31 32 33 34 +5.0v +5.5v +6.0v ip3 (dbm) frequency (ghz) 0 10 20 30 40 50 60 70 13 15 17 19 21 23 25 27 29 ghz 30 ghz 31 ghz 32 ghz 33 ghz im3 (dbc) pout/tone (dbm) 0 4 8 12 16 20 24 28 32 36 -9 -6 -3 0 3 6 9 12 15 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 0 10 20 30 40 50 60 70 13 15 17 19 21 23 25 27 29 ghz 30 ghz 31 ghz 32 ghz 33 ghz im3 (dbc) pout/tone (dbm) 0 10 20 30 40 50 60 70 13 15 17 19 21 23 25 27 29 ghz 30 ghz 31 ghz 32 ghz 33 ghz im3 (dbc) pout/tone (dbm) -70 -60 -50 -40 -30 -20 -10 0 27 28 29 30 31 32 33 34 +25c +85c -55c isolation (db) frequency (ghz)
amplifiers - l ine a r & p ower - chip 3 3 - 5 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC906 v03.0911 gaas phemt mmic 2 watt power amplifier, 27.3 - 33.5 ghz absolute maximum ratings drain bias voltage (vd) +7v rf i nput p ower ( rfin ) +20 dbm channel temperature 150 c continuous p diss (t= 85 c) (derate 135 m w /c above 85 c) 8.8 w thermal r esistance (channel to die bottom) 7.4 c/ w s torage temperature -65 to +150 c o perating temperature -55 to +85 c vdd (v) idd (ma) +5.0 1200 +5.5 1200 +6.0 1200 note: amplifer will operate over full voltage ranges shown above. vgg adjusted to achieve idd = 1200 ma at +6.0v typical supply current vs. vdd ele ct ros tat ic sensi t i v e de v ic e o b ser v e h a n d lin g pre caut ions power dissipation gain & power vs. supply voltage @ 29.5 ghz gain & power vs. supply current @ 29.5 ghz 15 20 25 30 35 40 1000 1100 1200 1300 gain p1db psat idd (ma) gain (db), p1db (dbm), psat (dbm) 0 1 2 3 4 5 6 7 8 9 10 0 4 8 12 16 max pdis @ 85c 28ghz 29ghz 30ghz 31ghz power dissipation (w) input power (dbm) 15 20 25 30 35 40 5 5.5 6 gain p1db psat vdd (v) gain (db), p1db (dbm), psat (dbm)
amplifiers - l ine a r & p ower - chip 3 3 - 6 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC906 v03.0911 gaas phemt mmic 2 watt power amplifier, 27.3 - 33.5 ghz outline drawing no t es : 1. a ll d imensions a re in in c hes [ mm ] 2. d ie t hi ck ness is .004 3. ty pi ca l b on d p ad is .004 s qua re 4. back si d e me ta lli zat ion : g ol d 5. b on d p ad me ta lli zat ion : g ol d 6. back si d e me ta l is g ro u n d. 7. c onne ct ion not re qu ire d for u nl ab ele d b on d p ad s . 8. ov er a ll d ie si z e 0 .002 die packaging information [1] s tandard alternate g p -2 (gel p ack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation.
amplifiers - l ine a r & p ower - chip 3 3 - 7 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com application circuit HMC906 v03.0911 gaas phemt mmic 2 watt power amplifier, 27.3 - 33.5 ghz pad descriptions p ad n umber f unction description i nterface s chematic 1 rfin this pad is ac coupled and matched to 50 o hms over the operating frequency range. 2, 12 vgg gate control for amplifer. e xternal bypass caps 100 p f , 0.01 f and 4.7 f are required. o nly one pad connection is required as these two pads are connected on-chip. 3 - 6 vdd1 drain bias voltage for the top half of the amplifer. e xternal bypass capacitors of 100 p f required for each pad, followed by common 0.1 f and 4.7 f are capacitors. 7 rfo ut this pad is ac coupled and matched to 50 o hms. 8 - 11 vdd2 drain bias voltage for the lower half of the amplifer. e xter - nal bypass capacitors of 100 p f required for each pad, followed by common 0.1 f and 4.7 f are capacitors. die bottom g n d die bottom must be connected to rf /dc ground. *vgg may be applied to either pad 2 or pad 12.
amplifiers - l ine a r & p ower - chip 3 3 - 8 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC906 v03.0911 gaas phemt mmic 2 watt power amplifier, 27.3 - 33.5 ghz assembly diagram [1] [1] vgg may be applied to either pad 2 or pad 12.
amplifiers - l ine a r & p ower - chip 3 3 - 9 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hm c general h andling, m ounting, bonding n ote). 50 o hm m icrostrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip ( f igure 1). i f 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. o ne way to accom - plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane ( f igure 2). m icrostrip substrates should be placed as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either w affle or gel based es d protec - tive containers, and then sealed in an es d protective bag for shipment. o nce the sealed es d protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: h andle the chips in a clean environment. d o no t attempt to clean the chip using liquid cleaning systems. static sensitivity: f ollow es d precautions to protect against es d strikes. transients: s uppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick- up. general handling: h andle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with au s n eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. e utectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. w hen hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. d o no t expose the chip to a temperature greater than 320 c for more than 20 seconds. n o more than 3 seconds of scrubbing should be required for attachment. e poxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with two 1 mil wires are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possible, less than 12 mils (0.31 mm). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab HMC906 v03.0911 gaas phemt mmic 2 watt power amplifier, 27.3 - 33.5 ghz
amplifiers - l ine a r & p ower - chip 3 3 - 10 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com notes: HMC906 v03.0911 gaas phemt mmic 2 watt power amplifier, 27.3 - 33.5 ghz
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